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 RB495D
Diodes
Schottky barrier diode
RB495D
!Applications Low current rectification !External dimensions (Units : mm)
2.90.2 1.90.2 +0.2 -0.1 0.80.1
1.1
1.6
0.4
(All leads have same dimensions)
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Circuit
!Absolute maximum ratings (Ta = 25C)
Parameter Peak reverse voltage DC reverse voltege Mean rectifying current1 Peak forward surge current2 Junction temperature Storage temperature Operating temperture
1 Mean output current per element : IO / 2 2 60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg Topr
Limits 40 25 0.4 2 125
Unit V V A A
C C C
-40~+125 -30~+85
!Electrical characteristics (Ta = 25C)
Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - - - Typ. - - - Max. 0.30 0.50 70 Unit V V A IF=10mA IF=200mA VR=25V Conditions
Note) ESD sensiteve product handling required.
0.3~0.6
D3Q
!Features 1) Small surface mounting type. (SMD3) 2) Two diodes with common cathode for excellent installation efficiency. 3) High reliability.
0.95 0.95
+0.2 -0.1
2.80.2
0~0.1
+0.1 -0.05
+0.1 0.15 -0.06
RB495D
Diodes
!Electrical characteristic curves (Ta = 25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100m
100
1
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
10m
Ta=125C
1m
100m
=1 2
C
5
C
75
25 C
Ta
10m
-40
C
75C
100
10
1m
25C
10
100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1 0 10
0C
20
30
40
1 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between terminals characteristics


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